Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors

Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are respectively, a semimetal, insulator, semiconductor, ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors (SI) with any desired resistance-area product.Comment: 4 pages, 4 figures. Accepted for publication in Physical Review

Substrate-induced bandgap in graphene on hexagonal boron nitride

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors.Comment: 5 pages, 4 figures, Phys. Rev. B, in pres

Stability of conductance oscillations in monatomic sodium wires

We study the stability of conductance oscillations in monatomic sodium wires with respect to structural variations. The geometry, the electronic structure and the electronic potential of sodium wires suspended between two sodium electrodes are obtained from self-consistent density functional theory calculations. The conductance is calculated within the framework of the Landauer-B\"utttiker formalism, using the mode-matching technique as formulated recently in a real-space finite-difference scheme [Phys. Rev. B \textbf{70}, 195402 (2004)]. We find a regular even-odd conductance oscillation as a function of the wire length, where wires comprising an odd number of atoms have a conductance close to the quantum unit $G_0=e^2/\pi\hbar$, and even-numbered wires have a lower conductance. The conductance of odd-numbered wires is stable with respect to geometry changes in the wire or in the contacts between the wire and the electrodes; the conductance of even-numbered wires is more sensitive. Geometry changes affect the spacing and widths of the wire resonances. In the case of odd-numbered wires the transmission is on-resonance, and hardly affected by the resonance shapes, whereas for even-numbered wires the transmission is off-resonance and sensitive to the resonance shapes. Predicting the amplitude of the conductance oscillation requires a first-principles calculation based upon a realistic structure of the wire and the leads. A simple tight-binding model is introduced to clarify these results.Comment: 16 pages, 20 figure

Real space finite difference method for conductance calculations

We present a general method for calculating coherent electronic transport in quantum wires and tunnel junctions. It is based upon a real space high order finite difference representation of the single particle Hamiltonian and wave functions. Landauer's formula is used to express the conductance as a scattering problem. Dividing space into a scattering region and left and right ideal electrode regions, this problem is solved by wave function matching (WFM) in the boundary zones connecting these regions. The method is tested on a model tunnel junction and applied to sodium atomic wires. In particular, we show that using a high order finite difference approximation of the kinetic energy operator leads to a high accuracy at moderate computational costs.Comment: 13 pages, 10 figure

QuantumATK: An integrated platform of electronic and atomic-scale modelling tools

QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously presented, the purpose of this paper is to give a general overview of the platform. The QuantumATK simulation engines enable electronic-structure calculations using density functional theory or tight-binding model Hamiltonians, and also offers bonded or reactive empirical force fields in many different parametrizations. Density functional theory is implemented using either a plane-wave basis or expansion of electronic states in a linear combination of atomic orbitals. The platform includes a long list of advanced modules, including Green's-function methods for electron transport simulations and surface calculations, first-principles electron-phonon and electron-photon couplings, simulation of atomic-scale heat transport, ion dynamics, spintronics, optical properties of materials, static polarization, and more. Seamless integration of the different simulation engines into a common platform allows for easy combination of different simulation methods into complex workflows. Besides giving a general overview and presenting a number of implementation details not previously published, we also present four different application examples. These are calculations of the phonon-limited mobility of Cu, Ag and Au, electron transport in a gated 2D device, multi-model simulation of lithium ion drift through a battery cathode in an external electric field, and electronic-structure calculations of the composition-dependent band gap of SiGe alloys.Comment: Submitted to Journal of Physics: Condensed Matte

First-principles Green's-function method for surface calculations

We present an efficient implementation of a surface Green's-function method for atomistic modeling of surfaces within the framework of density functional theory using a pseudopotential localized basis set approach. In this method, the system is described as a truly semi-infinite solid with a surface region coupled to an electron reservoir, thereby overcoming several fundamental drawbacks of the traditional slab approach. The versatility of the method is demonstrated with several applications to surface physics and chemistry problems that are inherently difficult to address properly with the slab method, including metal work function calculations, band alignment in thin-film semiconductor heterostructures, surface states in metals and topological insulators, and surfaces in external electrical fields. Results obtained with the surface Green's-function method are compared to experimental measurements and slab calculations to demonstrate the accuracy of the approach.Peer reviewe